| PART |
Description |
Maker |
| IRFPG40 |
4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| RF1S4N100SM RFP4N100 |
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| APT1004RGN |
POWER MOS IV 1000V 3.3A 4.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10026JN |
POWER MOS IV 1000V 33A 0.26 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
|
